METHOD OF FABRICATING AND APPARATUS OF FABRICATING

专利名称：METHOD OF FABRICATING AND

APPARATUS OF FABRICATING TUNNELMAGNETIC RESISTIVE ELEMENT

发明人：Koji TSUNEKAWA,Yoshinori

NAGAMINE,Kazumasa NISHIMURA,FranckERNULT

申请号：US13728448申请日：20121227

公开号：US20130134032A1公开日：20130530

专利附图：

摘要：One embodiment of the present invention is a method of fabricating a tunnelmagnetic resistive element including a first ferromagnetic layer, a tunnel barrier layer anda second ferromagnetic layer, comprising a step of making the tunnel barrier layer,comprising the step of making the tunnel barrier layer includes the steps of: forming afirst layer on the first ferromagnetic layer by applying DC power to a metal target andintroducing sputtering gas without introducing oxygen gas in a sputtering chamber; andforming a second layer on the first layer by applying DC power to the metal target andintroducing the sputtering gas and oxygen gas with the DC power to be applied to themetal target from the step of forming the first layer in the sputtering chamber, whereinthe second layer is oxygen-doped.

申请人：CANON ANELVA CORPORATION

地址：Kawasaki-shi JP

国籍：JP

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