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ZTX849资料

2022-07-10 来源:爱问旅游网
NPN SILICON PLANAR MEDIUM POWERHIGH CURRENT TRANSISTOR

ISSUE 2 󰂖 MARCH 94FEATURES

*5 Amps continuous current*Up to 20 Amps peak current*Very low saturation voltagesAPPLICATIONS

*LCD backlight converter*Flash gun converters*Battery powered circuits*Motor drivers

ZTX849C B EABSOLUTE MAXIMUM RATINGS.PARAMETERCollector-Base VoltageCollector-Emitter VoltageEmitter-Base VoltagePeak Pulse CurrentContinuous Collector CurrentPractical Power Dissipation*Power Dissipation at Tamb=25°COperating and Storage Temperature RangeSYMBOLVCBOVCEOVEBOICMICPtotpPtotTj:Tstg803062051.581.2E-LineTO92 CompatibleVALUEUNITVVVAAWW°C-55 to +200*The power which can be dissipated assuming the device is mounted in a typical manner on aP.C.B. with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)PARAMETERCollector-Base BreakdownVoltageCollector-Emitter BreakdownVoltagCollector-Emitter BreakdownVoltageEmitter-Base BreakdownVoltageCollector Cut-Off CurrentCollector Cut-Off CurrentEmitter Cut-Off CurrentCollector-Emitter SaturationVoltageSYMBOLV(BR)CBOV(BR)CERV(BR)CEOV(BR)EBOICBOICERR ≤1KΩIEBOVCE(sat)25501101809303-291MIN.8080306TYP.12012040850150110501002002201050MAX.UNITVVVVnACONDITIONS.IC=100µAIC=1µA, RB ≤1KΩIC=10mA*IE=100µAVCB=70VVCB=70V, Tamb=100°CVCB=70VVCB=70V, Tamb=100°CVEB=6VIC=0.5A, IB=20mA*IC=1A, IB=20mA*IC=2A, IB=20mA*IC=5A, IB=200mA*IC=5A, IB=200mA*µAnAµAnAmVmVmVmVmVBase-Emitter Saturation VoltageVBE(sat)元器件交易网www.cecb2b.com

ZTX849ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)PARAMETERBase-Emitter Turn-On VoltageStatic Forward Current TransferRatioTransition FrequencyOutput CapacitanceSwitching TimesSYMBOLVBE(on)hFE10010010030MIN.TYP.850200200170651007545630MAX.950300MHzpFnsnsUNITmVCONDITIONS.IC=5A, VCE=1V*IC=10mA, VCE=1VIC=1A, VCE=1V*IC=5A, VCE=1V*IC=20A, VCE=1V*IC=100mA, VCE=10Vf=50MHzVCB=10V, f=1MHz*IC=1A, IB!=100mAIB2=100mA, VCC=10VfTCobotontoff*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%THERMAL CHARACTERISTICSPARAMETERThermal Resistance:Junction to AmbientJunction to CaseSYMBOLRth(j-amb)Rth(j-case)MAX.15050UNIT°C/W°C/WMax Power Dissipation - (Watts)4.0Thermal Resistance (°C/W)150t1D.C.D=t1/tPtPD=0.63.0Case te1002.0m1.0Ambient temperatu-40-2002040perature50D=0.2D=0.1D=0.05Single Pulsere608010012014016018020000.00010.0010.010.1110100T -Temperature (°C) Pulse Width (seconds) Derating curveMaximum transient thermal impedance3-292

元器件交易网www.cecb2b.com

ZTX849TYPICAL CHARACTERISTICS0.81.6hFE - Normalised Gain0.61.21.00.80.60.40.200.010.1110100VCE=5VVCE=1V2000.4IC/IB=10IC/IB=500.210000.010.1110100IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat)v IC hFEv IC 2.02.0VCE=1V VBE(sat) - (Volts)1.5 VBE - (Volts)IC/IB=10IC/IB=501.51.01.00.50.0010.010.11101000.50.0010.010.1110100IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat)v IC 100Single Pulse Test at Tamb=25°CVBE(on)v IC IC - Collector Current (Amps)101D.C. 1s 100ms 10ms1.0ms 0.1ms0.10.1110100VCE - Collector Voltage (Volts) Safe Operating Area 3-293

hFE - Typical Gain VCE(sat) - (Volts)1.4300

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