专利名称：STRUCTURE AND METHOD FOR
MANUFACTURING DEVICE WITH A V-SHAPECHANNEL NMOSFET
发明人：Huilong Zhu,Zhijiong Luo申请号：US12054738申请日：20080325
公开号：US20090242941A1公开日：20091001
专利附图：
摘要：A CMOS structure includes a v-shape surface in an nMOSFET region. The v-shapesurface has an orientation in a (100) plane and extends into a Si layer in the nMOSFET
region. The nMOSFET gate dielectric layer is a high-k material, such as Hf02. The
nMOSFET has a metal gate layer, such as Ta. Poly-Si is deposited on top of the metal gatelayer.
申请人：Huilong Zhu,Zhijiong Luo
地址：Poughkeepsie NY US,Carmel NY US
国籍：US,US
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