MiniSKiiP 2nd Gen. PIM Size 3, 1200V / 50A
preliminary datasheetV23990-K249-A-01-14
Maximum Ratings / Höchstzulässige Werte
ParameterConditionSymbolValuesmax.UnitInput Rectifier Bridge Gleichrichter
Repetitive peak reverse voltage
Periodische Rückw. SpitzensperrspannungForward current per diodeDauergrenzstromSurge forward currentStoßstrom GrenzwertI2t-valueGrenzlastintegral
Power dissipation per DiodeVerlustleistung pro Diode
Transistor Inverter
Transistor Wechselrichter
Collector-emitter break down voltageKollektor-Emitter-SperrspannungDC collector current
Kollektor-Dauergleichstrom
Repetitive peak collector currentPeriodischer KollektorspitzenstromPower dissipation per IGBTVerlustleistung pro IGBTGate-emitter peak voltageGate-Emitter-SpitzenspannungSC withstand timeKurzschlußverhalten
Diode Inverter
Diode WechselrichterDC forward currentDauergleichstrom
Repetitive peak forward currentPeriodischer SpitzenstromPower dissipation per DiodeVerlustleistung pro Diode
Tj=150°Ctp=1msTj=150°C
Th=80°C,Tc=80°CTh=80°CTh=80°CTc=80°C
DC currentTh=80°C;
Tc=80°CTj=25°Ctp=10mstp=10msTj=150°C
Tj=25°CTh=80°CTc=80°C
VRRMIFAVIFSMI2tPtot
1600588070024506293
VAAA2sW
VCEICIcpulsPtotVGE
Tj125°CVGE=15VVCC=900V
tSC
120045599082125±2010
VAAWVus
Tj=150°Ctp=1msTj=150°C
Th=80°C,Tc=80°CTh=80°CTh=80°CTc=80°C
IFIFRMPtot
4054795786
AAW
MiniSKiiP is a trademark of SEMIKRON.Copyright by Vincotech Revision:1 SEMIKRON is a trademark. Tyco is a trademark.
copyright by Tyco Electronics
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V23990-K249-A-PM
MiniSKiiP 2nd Gen. PIM Size 3, 1200V / 50A
preliminary datasheetV23990-K249-A-01-14
Maximum Ratings / Höchstzulässige Werte
ParameterConditionSymbolValuesmax.UnitTransistor BRC Transistor BRC
Collector-emitter break down voltageKollektor-Emitter-SperrspannungDC collector current
Kollektor-Dauergleichstrom
Repetitive peak collector currentPeriodischer KollektorspitzenstromPower dissipation per IGBTVerlustleistung pro IGBTGate-emitter peak voltageGate-Emitter-SpitzenspannungSC withstand timeKurzschlußverhalten
Diode BRCDiode BRC
DC forward currentDauergleichstrom
Repetitive peak forward currentPeriodischer SpitzenstromPower dissipation per DiodeVerlustleistung pro DiodeThermal properties
Thermische Eigenschaftenmax. Chip temperaturemax. ChiptemperaturStorage temperatureLagertemperatur
Operation temperatureBetriebstemperaturInsulation propertiesModulisolationInsulation voltageIsolationsspannungCreepage distanceKriechstreckeClearanceLuftstrecke
t=1min
Tj=150°CTj=150°Ctp=1msTj=150°C
Th=80°CTc=80°CTh=80°CTh=80°CTc=80°C
VCEICIcpulsPtotVGE
Tj125°CVCE=900 V
VGE=15V
tSC
12005664111109165±2010
VAAWVus
Tj=150°CTj=150°Ctp=1msTj=150°C
Th=80°CTc=80°CTh=80°CTh=80°CTc=80°C
IFIFRMPtot
4455876599
AAW
TjmaxTstgTop
150 -40…+125 -40…+125
°C°C°C
Vis4000min 12,7min 12,7
Vdcmmmm
MiniSKiiP is a trademark of SEMIKRON.
Copyright by Vincotech Revision:1
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SEMIKRON is a trademark. Tyco is a trademark.
copyright by Tyco Electronics
V23990-K249-A-PM
MiniSKiiP 2nd Gen. PIM Size 3, 1200V / 50A
preliminary datasheetV23990-K249-A-01-14
Characteristic values
Description
SymbolConditions
T(C°)
Other conditions(Rgon-Rgoff)
Input Rectifier Bridge GleichrichterForward voltage
Durchlaßpannung
Threshold voltage (for power loss calc. only)Schleusenspannung
Slope resistance (for power loss calc. only)ErsatzwiderstandReverse current
Sperrstrom
Thermal resistance chip to heatsink per chipWärmewiderstand Chip-Kühlkörper pro Chip Thermal resistance chip to case per chipWärmewiderstand Chip-Gehause pro Chip
VGE(V)VGS(V)
VR(V) IC(A)
IF(A)VCE(V)
VDS(V)Id(A)
ValuesUnit
MinTypMax
VFVtortIr
Tj=25°CTj=125°C
Tj=25°CTj=125°CTj=25°CTj=125°CTj=25°CTj=140±10°C
Thermal grease thickness50um WarmeleitpasteDicke50umȜ = 0,61 W/mK
15001500
350,81,020,940,88
1,35VVOhm
3535
00
0,750,0040,006
0,12
1,14
mA
RthJHK/W
RthJC0,75K/W
Transistor Inverter
Transistor WechselrichterGate emitter threshold voltageGate-Schwellenspannung
Collector-emitter saturation voltageKollektor-Emitter Sättigungsspannung
Collector-emitter cut-off current incl. DiodeKollektor-Emitter Reststrom Gate-emitter leakage currentGate-Emitter ReststromIntegrated Gate resistorIntegrirter Gate WiderstandTurn-on delay time EinschaltverzögerungszeitRise time
Anstiegszeit
Turn-off delay time AbschaltverzögerungszeitFall time
Fallzeit
Turn-on energy loss per pulseEinschaltverlustenergie pro PulsTurn-off energy loss per pulseAbschaltverlustenergie pro PulsInput capacitanceEingangskapazitätOutput capacitance
Ausgangskapazität
Reverse transfer capacitanceRückwirkungskapazitätGate chargeGate Ladung
Thermal resistance chip to heatsink per chipWärmewiderstand Chip-Kühlkörper pro ChipThermal resistance chip to case per chipWärmewiderstand Chip-Gehause pro Chip
VGE(th)VCE(sat)ICESIGESRginttd(on)trtd(off)tfEonEoffCiesCossCrssQGate
Tj=25°CTj=125°CTj=25°CTj=125°CTj=25°CTj=125°CTj=25°CTj=125°C
VCE=VGE
1515025
12240
0,0025050
51,3500
5,81,661,87
6,52,150,005300
VVmAnAOhmns
4
Tj=25°CTj=125°CTj=25°CTj=125°CTj=25°CTj=125°CTj=25°CTj=125°CTj=25°CTj=125°CTj=25°CTj=125°CTj=25°CTj=125°CTj=25°CTj=125°CTj=25°CTj=125°CTj=25°CTj=125°C
Rgoff=18 OhmRgon= 18 OhmRgoff=18 OhmRgon= 18 OhmRgoff=18 OhmRgon= 18 OhmRgoff=18 OhmRgon= 18 OhmRgoff=18 OhmRgon= 18 OhmRgoff=18 OhmRgon= 18 Ohmf=1MHzf=1MHzf=1MHzVCE=600VICpulse=50AThermal grease thickness50um WarmeleitpasteDicke50umȜ = 0,61 W/mK
0,85
±15±15±15±15±15±15000±15
600600600600600600252525
505050505050
66
ns
23
ns
492
ns
205
mWs
5,48
mWs
5,473,70,80,7360
nFnFnFnC
RthJHK/W
RthJC0,56K/W
Diode Inverter
Diode WechselrichterDiode forward voltageDurchlaßspannung
Peak reverse recovery currentRückstromspitze
Reverse recovery timeSperreverzögerungszeitReverse recovered charge
SperrverzögerungsladungReverse recovered energySperrverzögerungsenergie
Thermal resistance chip to heatsink per chipWärmewiderstand Chip-Kühlkörper pro ChipThermal resistance chip to case per chipWärmewiderstand Chip-Gehause pro Chip
VFIRMtrrQrrErec
Tj=25°CTj=125°CTj=25°CTj=125°CTj=25°CTj=125°CTj=25°CTj=125°CTj=25°CTj=125°C
Rgon= 18 OhmdiF/dt = 2554 A/usRgon= 18 OhmdiF/dt = 2554 A/usRgon= 18 OhmdiF/dt = 2554 A/usRgon= 18 OhmdiF/dt = 2554 A/usThermal grease thickness50um WarmeleitpasteDicke50umȜ = 0,61 W/mK
0000
600600600600600600600600
50505050505050505050
1,31,571,56
1,9V$
95
ns
455
uC
12,5
mWs
5,171,23
K/W
RthJH
RthJC0,81K/W
MiniSKiiP is a trademark of SEMIKRON.
SEMIKRON is a trademark. Tyco is a trademark.
Copyright by Vincotech Revision:1 Finsinger Feld 1, D-85521 Ottobrunn
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copyright by Tyco Electronics
V23990-K249-A-PM
MiniSKiiP 2nd Gen. PIM Size 3, 1200V / 50A
preliminary datasheetV23990-K249-A-01-14
Characteristic values
Description
SymbolConditions
T(C°)
Other conditions(Rgon-Rgoff)
Transistor BRCTransistor BRC
Gate emitter threshold voltageGate-Schwellenspannung
Collector-emitter saturation voltageKollektor-Emitter SättigungsspannungCollector-emitter cut-off Kollektor-Emitter Reststrom Gate-emitter leakage currentGate-Emitter ReststromIntegrated Gate resistorIntegrirter Gate WiderstandTurn-on delay time EinschaltverzögerungszeitRise time
Anstiegszeit
Turn-off delay time AbschaltverzögerungszeitFall time
Fallzeit
Turn-on energy loss per pulseEinschaltverlustenergie pro PulsTurn-off energy loss per pulseAbschaltverlustenergie pro PulsInput capacitanceEingangskapazitätOutput capacitance
Ausgangskapazität
Reverse transfer capacitanceRückwirkungskapazitätGate chargeGate Ladung
Thermal resistance chip to heatsink per chipWärmewiderstand Chip-Kühlkörper pro ChipThermal resistance chip to case per chipWärmewiderstand Chip-Gehause pro Chip
RthJH
VGE(V)VGS(V)
VR(V) IC(A)
IF(A)VCE(V)
VDS(V)Id(A)
ValuesUnit
MinTypMax
VGE(th)VCE(sat)ICESIGESRginttd(on)trtd(off)tfEonEoffCissCossCiesQgate
Tj=25°CTj=125°C
Tj=25°CTj=125°CTj=25°CTj=125°CTj=25°CTj=125°C
VCE=VGE
1515025
12240
0,0025050
51,3500
5,81,61,79
6,52,150,05300
VVmAnAOhmns
4
Tj=25°CTj=125°CTj=25°CTj=125°CTj=25°CTj=125°CTj=25°CTj=125°CTj=25°CTj=125°CTj=25°CTj=125°CTj=25°CTj=125°CTj=25°CTj=125°CTj=25°CTj=125°CTj=25°CTj=125°C
Rgon= 18 OhmRgoff= 18 OhmRgon= 18 OhmRgoff= 18 OhmRgon= 18 OhmRgoff= 18 OhmRgon= 18 OhmRgoff= 18 OhmRgon= 18 OhmRgoff= 18 OhmRgon= 18 OhmRgoff= 18 Ohmf=1MHzf=1MHzf=1MHzVCE=600VIcpulse=50AThermal grease thickness50um WarmeleitpasteDicke50umȜ = 0,61 W/mK
0,64
±15±15±15±15±15±15000±15
600600600600600600252525
505050505050
70,5
ns
24
ns
486
ns
194
mWs
5,61
mWs
5,283,70,80,7360
nFnFnFnC
K/W
RthJC0,43K/W
Diode BRCDiode BRC
Diode forward voltageDurchlaßspannungReverse current
Sperrstrom
Reverse recovery timeSperreverzögerungszeitReverse recovered chargeSperrverzögerungsladungReverse recovery energySperrverzögerungsenergie
Thermal resistance chip to heatsink per chipWärmewiderstand Chip-Kühlkörper pro ChipThermal resistance chip to case per chipWärmewiderstand Chip-Gehause pro Chip
RthJHVFIrtrrQrrErec
Tj=25°CTj=125°CTj=25°CTj=125°CTj=25°CTj=125°CTj=25°CTj=125°CTj=25°CTj=125°C
Rgon= 18 OhmdiF/dt = 2036 A/usRgon= 18 OhmdiF/dt = 2036 A/usRgon= 18 OhmdiF/dt = 2036 A/usThermal grease thickness50um WarmeleitpasteDicke50umȜ = 0,61 W/mK
5050
1224
1,30
1,521,55
1,950
VuAns
000
600600600
505050
467,4
uC
11,22
mWs
4,561,08
K/W
RthJC0,71K/W
PTC-ThermistorPTC-WiderstandNominal resistanceNominaler Widerstand
Typical temperature coefficientTipischer TemperaturkoeffizientRecommended measuring currentEmpfohlener MessstromMeasured valuesGemessene Werte
R25R100Į
Tj=25°CTj=100°CTj=25°CTj=125°CTj=25°CTj=125°CTj=25°C
tolerance = 3%tolerance = 2%0,971,63711,670,76
1,031,703kOhmkOhm%/K
1
Im = 1mAIm= 3mA
0,932,84
3
mA
1,033,4
V
ImVPTC
MiniSKiiP is a trademark of SEMIKRON.
Copyright by Vincotech Revision:1
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SEMIKRON is a trademark. Tyco is a trademark.
copyright by Tyco Electronics
V23990-K249-A-PM
MiniSKiiP 2nd Gen. PIM Size 3, 1200V / 50A
Output inverter
Figure1.Typical output characteristics
Output inverter IGBTIc= f(VCE) )120A( CIVGE=17V10080604020VGE=7V001234VCE (V)5parameter: tp = 250 usTj = 25 °C
VGE parameter:from:7V to17V
in1V stepsFigure3.Typical transfer characteristics
Output inverter IGBT
Ic= f(VGE) 90)A( C80ITj= 25°C70Tj=125°C60504030201000246810VGE (V)12parameter: tp = 250 usVCE = 10VMiniSKiiP is a trademark of SEMIKRON.
SEMIKRON is a trademark. Tyco is a trademark
Copyright by Vincotech . Revision:1 Finsinger Feld 1, D-85521 Ottobrunn
copyright by Tyco Electronics
preliminary datasheetV23990-K249-A-01-14
Figure2.Typical output characteristics
Output inverter IGBT
Ic= f(VCE) 120)A( CIVGE=17V10080604020VGE=7V001234VCE (V)5parameter: tp = 250 usTj = 125 °C
VGE parameter:from:7V to17V
in1V steps
Figure4.Typical diode forward current as
a function of forward voltage
Output inverter FRED
IF=f(VF)120)A( FTj= 25°CI100Tj=125°C80604020000,511,522,5VF (V)3parameter: tp = 250 us
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V23990-K249-A-PM
MiniSKiiP 2nd Gen. PIM Size 3, 1200V / 50A
Output inverter
Figure 5.Typical switching energy losses
as a function of collector currentOutput inverter IGBT
E = f (Ic)12)sWm(Eon E10Eoff8Erec6420020406080IC (A)100inductive load, Tj = 125 °C
VCE =600VVGE=±15VRgon=18ȍRgoff=18ȍ
Figure 7.Typical switching times as a
function of collector current
Output inverter IGBT
t = f (Ic)
1)sPtdoff( ttf0,1tdon0,01tr0,001020406080IC (A)100inductive load, Tj = 125 °C
VCE =600VVGE=±15VRgon=18ȍRgoff=18ȍ
MiniSKiiP is a trademark of SEMIKRON.
SEMIKRON is a trademark. Tyco is a trademark
Copyright by Vincotech . Revision:1 Finsinger Feld 1, D-85521 Ottobrunn
copyright by Tyco Electronics
preliminary datasheetV23990-K249-A-01-14
Figure 6.Typical switching energy losses
as a function of gate resistorOutput inverter IGBT
E = f (RG))s12Wm( E108Eon6Eoff4Erec20010203040RG(:)50inductive load, Tj = 125 °C
VCE =600VVGE=±15VIc =50A
Figure 8.Typical switching times as a
function of gate resistorOutput inverter IGBT
t = f (RG)
1)sPtdoff( ttf0,1tdontr0,010,001010203040RG (:)50inductive load, Tj = 125 °C
VCE =600VVGE=±15VIc =50A
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V23990-K249-A-PM
MiniSKiiP 2nd Gen. PIM Size 3, 1200V / 50A
preliminary datasheetV23990-K249-A-01-14
Output inverter
Figure 9.Typical reverse recovery time as a
function of IGBT turn on gate resistorOutput inverter FRED diode
Figure 10.Typical reverse recovery current as a
function of IGBT turn on gate resistorOutput inverter FRED diode
trr = f (Rgon)
t rr(Ps)0,80,70,60,5IRRM = f (Rgon)
IrrM (A)1801601401201000,4800,30,20,10010203040RGon (:)506040200010203040RGon(:)50Tj =VR =IF=VGE=12560050±15°CVAVTj =VR =IF=VGE=12560050±15°CVAV
Figure 11.Typical reverse recovery charge as a
function of IGBT turn on gate resistorOutput inverter FRED diode
Qrr = f (Rgon)
Figure 12.Typical rate of fall of forward
and reverse recovery current as afunction of IGBT turn on gate resistorOutput inverter FRED diodedI0/dt,dIrec/dt= f (Rgon)
direc / dt (A/Ps)4900Qrr (PC)15420012dIrec/dt350092800dI0/dt62100140037000010203040RGon (:50)0010203040RGon (:)50Tj =
VR =IF=VGE=12560050±15°CVAVTj =VR =IF=VGE=12560050±15°CVAV
MiniSKiiP is a trademark of SEMIKRON.
SEMIKRON is a trademark. Tyco is a trademark
Copyright by Vincotech Revision:1 . Finsinger Feld 1, D-85521 Ottobrunn
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copyright by Tyco Electronics
V23990-K249-A-PM
MiniSKiiP 2nd Gen. PIM Size 3, 1200V / 50A
Output inverter
Figure 13.IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101)W/K( HJhtZ100D = 0,5 0,210-1 0,1 0,05 0,02 0,01 0,005 0.00010-210-510-410-310-210-1100tp (s)101Parameter: D = tp / TRthJH=0,85K/WIGBT thermal model valuesR (C/W)
Tau (s)0,062,6E+010,111,8E+000,443,2E-010,188,5E-020,069,5E-030,036,6E-040,051,2E-040,00
0,0E+00
Copyright by Vincotech MiniSKiiP is a trademark of SEMIKRON.
. Revision:1 SEMIKRON is a trademark. Tyco is a trademark
Finsinger Feld 1, D-85521 Ottobrunn
copyright by Tyco Electronicspreliminary datasheetV23990-K249-A-01-14
Figure 14.FRED transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101)W/K( HJhtZ100D = 0,510-1 0,2 0,1 0,05 0,02 0,01 0,005 0.00010-210-510-410-310-210-1100tp (s)101Parameter: D = tp / TRthJH=1,23K/W
FRED thermal model valuesR (C/W)
Tau (s)0,043,0E+010,111,9E+000,443,1E-010,438,7E-020,151,3E-020,071,3E-030,042,0E-040,06
1,4E-04
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Page8
V23990-K249-A-PM
MiniSKiiP 2nd Gen. PIM Size 3, 1200V / 50A
Output inverter
Figure15.Power dissipation as a
function of heatsink temperatureOutput inverter IGBTPtot = f (Th)
200)W( totP1751501251007550250050100150Th (oC)200parameter: Tj = 150°C
Figure17.Power dissipation as a
function of heatsink temperature
Output inverter FREDPtot = f (Th)
)W150( totP1251007550250050100150Th (oC)200parameter: Tj = 150°CCopyright by Vincotech MiniSKiiP is a trademark of SEMIKRON.. Revision:1 SEMIKRON is a trademark. Tyco is a trademark
Finsinger Feld 1, D-85521 Ottobrunn
copyright by Tyco Electronicspreliminary datasheetV23990-K249-A-01-14
Figure16.Collector current as a
function of heatsink temperatureOutput inverter IGBT
Ic = f (Th)
80)A( CI706050403020100050100150Th (oC)200parameter: Tj = 150°CVGE=15V
Figure18.Forward current as a
function of heatsink temperatureOutput inverter FRED
IF = f (Th)
80)A( FI706050403020100050100150Th (oC)200parameter: Tj = 150°C
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Page9
V23990-K249-A-PM
MiniSKiiP 2nd Gen. PIM Size 3, 1200V / 50A
Brake
Figure19.Typical output characteristics
Brake IGBTIc= f(VCE)
120)A( CIVGE=17V10080604020VGE=7V001234VCE (V)5parameter: tp = 250 usTj = 25 °C
VGE parameter:from:
7V to17V
in1V steps
Figure 21.Typical transfer characteristics
Brake IGBT
Ic= f(VGE)
90)A( CI80Tj= 25°C70Tj=125°C60504030201000246810VGE (V)12parameter: tp = 250 usVCE = 10VMiniSKiiP is a trademark of SEMIKRON.
Copyright by Vincotech Revision:1
SEMIKRON is a trademark. Tyco is a trademark
.
Finsinger Feld 1, D-85521 Ottobrunn
copyright by Tyco Electronics
preliminary datasheetV23990-K249-A-01-14
Figure20.Typical output characteristics
Brake IGBT
Ic= f(VCE)
120)A( CIVGE=17V10080604020VGE=7V001234VCE (V)5parameter: tp = 250 us
Tj = 125 °C
VGE parameter:from:
7V to17V
in1V steps
Figure 22.Typical diode forward current as
a function of forward voltage
Brake FRED
IF=f(VF)
120)A( FITj= 25°C100Tj=125°C80604020000,511,52VF (V)2,5parameter: tp = 250 us
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Page10
V23990-K249-A-PM
MiniSKiiP 2nd Gen. PIM Size 3, 1200V / 50A
Brake
Figure 23.Typical switching energy losses
as a function of collector currentBrake IGBT
E = f (Ic)
12)sWEonm( E10Eoff8Erec6420020406080IC (A)100inductive load, Tj = 125 °CVCE =600VVGE=±15VRgon = 18ȍRgoff = 18ȍ
Figure 25.Typical switching times as a
function of collector current
Brake IGBT
t = f (Ic)
1)sP( ttdofftf0,1tdontr0,010,001020406080IC (A)100inductive load, Tj = 125 °C
VCE =600VVGE=±15VRgon =18ȍRgoff =18ȍ
MiniSKiiP is a trademark of SEMIKRON.
Copyright by Vincotech Revision:1
SEMIKRON is a trademark. Tyco is a trademark
.
Finsinger Feld 1, D-85521 Ottobrunn
copyright by Tyco Electronics
preliminary datasheetV23990-K249-A-01-14
Figure 24.Typical switching energy losses
as a function of gate resistorBrake IGBT
E = f (RG)
)12sWm( E10Eon86Eoff4Erec20010203040RG (:)50inductive load, Tj = 125 °CVCE =600VVGE=±15VIc =50A
Figure 26.Typical switching times as a
function of gate resistorBrake IGBT
t = f (RG)
1)sP(tdoff ttf0,1tdontr0,010,001010203040RG (:)50inductive load, Tj = 125 °C
VCE =600VVGE=±15VIc =50A
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Page11
V23990-K249-A-PM
MiniSKiiP 2nd Gen. PIM Size 3, 1200V / 50A
Brake
Figure 27.IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101100D = 0,510-1 0,2 0,1 0,05 0,02 0,01 0,005 0.00010-210-510-410-310-210-1100101Parameter: D = tp / TRthJH=0,64K/WFigure 29.Power dissipation as a
function of heatsink temperatureBrake IGBT
Ptot = f (Th)
300)W( totP250200150100500050100150Th (oC)200parameter: Tj = 150°C
MiniSKiiP is a trademark of SEMIKRON.
Copyright by Vincotech Revision:1
SEMIKRON is a trademark. Tyco is a trademark
.
Finsinger Feld 1, D-85521 Ottobrunn
copyright by Tyco Electronics
preliminary datasheetV23990-K249-A-01-14
Figure 28.FRED transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101100D = 0,510-1 0,2 0,1 0,05 0,02 0,01 0,005 0.00010-210-510-410-310-210-1100101Parameter: D = tp / TRthJH=1,08K/W
Figure 30.Collector current as a
function of heatsink temperatureBrake IGBT
Ic = f (Th)
80)A( CI706050403020100050100150Th (oC)200parameter: Tj = 150°C
VGE=15V
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Page12
V23990-K249-A-PMMiniSKiiP 2nd Gen. PIM Size 3, 1200V / 50ABrakeFigure 31.Power dissipation as afunction of heatsink temperatureBrake FREDPtot = f (Th)160)W( totP140120100806040200050100150Th (oC)200parameter: Tj = 150°CMiniSKiiP is a trademark of SEMIKRON.
Copyright by Vincotech Revision:1
SEMIKRON is a trademark. Tyco is a trademark
.
Finsinger Feld 1, D-85521 Ottobrunn
copyright by Tyco Electronics
preliminary datasheetV23990-K249-A-01-14Figure 32.Forward current as a function of heatsink temperatureBrake FREDIF = f (Th)80)A( FI706050403020100050100150Th (oC)200parameter: Tj = 150°C
power.switches@tycoelectronics.com
Page13
V23990-K249-A-PM
MiniSKiiP 2nd Gen. PIM Size 3, 1200V / 50A
Input rectifier bridge
Figure 33.Typical diode forward current as
a function of forward voltage
Rectifier diode
IF=f(VF)
120)A( FI1008060Tj= 25°C40Tj=125°C20000,250,50,7511,25VF (V)1,5parameter: tp = 250 us Figure 35.Power dissipation as a
function of heatsink temperatureRectifier diode
Ptot = f (Th)
)160W( totP140120100806040200050100150Th (oC)200parameter: Tj = 150°CCopyright by Vincotech MiniSKiiP is a trademark of SEMIKRON.
. Revision:1 SEMIKRON is a trademark. Tyco is a trademark
Finsinger Feld 1, D-85521 Ottobrunn
copyright by Tyco Electronicspreliminary datasheetV23990-K249-A-01-14
Figure 34.Diode transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101100D = 0,5 0,210-1 0,1 0,05 0,02 0,01 0,005 0.00010-210-510-410-310-210-1100101Parameter: D = tp / TRthJH=1,14K/W
Figure 36.Forward current as a
function of heatsink temperatureRectifier diode
IF = f (Th)
100)A( FI9080706050403020100050100150Th (oC)200parameter: Tj = 150°C
power.switches@tycoelectronics.com
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V23990-K249-A-PM
MiniSKiiP 2nd Gen. PIM Size 3, 1200V / 50A
Thermistor
Figure 37.Typical PTC characteristic
as afunction of temperature
RT = f (T)
3000PTC-typical temperature characteristic)ȍ(R25002000150010005000255075100125T (°C)150Copyright by Vincotech MiniSKiiP is a trademark of SEMIKRON.
Revision:1 SEMIKRON is a trademark. Tyco is a trademark
. Finsinger Feld 1, D-85521 Ottobrunn
copyright by Tyco ElectronicsPage15
preliminary datasheetV23990-K249-A-01-14
power.switches@tycoelectronics.com
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