Flash memory device

专利名称：Flash memory device发明人：Sam Kyu Won,Min Kyu Kim申请号：US10071226申请日：20020211

公开号：US20030099133A1公开日：20030529

专利附图：

摘要：A flash memory device according to the present invention comprises: a memorycell array having a plurality of memory cells; a dummy cell array having a plurality ofdummy cells and connected to each word line of the memory cell array; a loading meansfor applying a voltage to a bit line of the dummy cell array; a level detector for detecting

potential of the bit line in the dummy cell array; a row decoder for selecting a word lineof the dummy cell array and the memory cell array according to an address signal; and acolumn decoder for selecting a bit line of the memory cell array according to the addresssignal; a sense amplifier enabled by an output of the level detector and for comparing adata stored on the cell of the memory cell array with a data stored on a reference cell.

申请人：HYNIX SEMICONDUCTOR INC.

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