High voltage GaN transistors

专利名称：High voltage GaN transistors发明人：Yifeng Wu,Primit Parikh,Umesh Mishra申请号：US11603427申请日：20061121公开号：US07692263B2公开日：20100406

专利附图：

摘要：A multiple field plate transistor includes an active region, with a source, a drain,and a gate. A first spacer layer is over the active region between the source and the gateand a second spacer layer over the active region between the drain and the gate. A firstfield plate on the first spacer layer is connected to the gate. A second field plate on the

second spacer layer is connected to the gate. A third spacer layer is on the first spacerlayer, the second spacer layer, the first field plate, the gate, and the second field plate,with a third field plate on the third spacer layer and connected to the source. Thetransistor exhibits a blocking voltage of at least 600 Volts while supporting a current ofat least 2 Amps with an on resistance of no more than 5.0 mΩ-cm, of at least 600 Voltswhile supporting a current of at least 3 Amps with an on resistance of no more than 5.3mΩ-cm, of at least 900 Volts while supporting a current of at least 2 Amps with an onresistance of no more than 6.6 mΩ-cm, or a blocking voltage of at least 900 Volts whilesupporting a current of at least 3 Amps with an on resistance of no more than 7.0 mΩ-cm.

申请人：Yifeng Wu,Primit Parikh,Umesh Mishra

地址：Goleta CA US,Goleta CA US,Montecito CA US

国籍：US,US,US

代理机构：Koppel, Patrick, Heybl & Dawson

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