专利名称：Pitch multiplication process
发明人：Ramesh Venugopal,Christoph Wasshuber申请号：US10997936申请日：20041129公开号：US07208379B2公开日：20070424
专利附图：
摘要：A method for multiplying the pitch of a semiconductor device is disclosed. Themethod includes forming a patterned mask layer on a first layer, where the patternedmask layer has a first line width. The first layer can then be etched to form a first pluralityof sloped sidewalls. After removing a portion of the patterned mask so that the
patterned mask layer has a second line width less than the first line width, the first layercan be etched again to form a second plurality of sloped sidewalls. The patterned masklayer can then be removed. The first layer can be etched again to form a third plurality ofsloped sidewalls. The first plurality of sloped sidewalls, the second plurality of slopedsidewalls, and the third plurality of sloped sidewalls can form an array of paralleltriangular channels.
申请人：Ramesh Venugopal,Christoph Wasshuber
地址：Richardson TX US,Parker TX US
国籍：US,US
代理人：Peter K. McLarty,W. James Brady, III,Frederick J. Telecky, Jr.
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