专利名称：MEMORY DEVICES HAVING STRINGS OF
SERIES-COUPLED MEMORY CELLS
SELECTIVELY COUPLED TO DIFFERENT BITLINES
发明人：Frankie Roohparvar申请号：US13098931申请日：20110502
公开号：US20110205800A1公开日：20110825
专利附图：
摘要：Memory devices where ends of series-coupled strings of memory cells are
selectively coupled to different bit lines may facilitate increased memory densities,reduced fabrication steps and faster read operations when compared to traditionalNAND memory array architectures. Programming and erasing of the memory cells can beaccomplished in the same manner as a traditional NAND memory array. However, readingof the memory cells may be accomplished using charge sharing techniques similar toread operations in a DRAM device or by using one bit line as a ground node for sensingcurrent flow through the strings. The use of bit lines for virtual grounding is furthersuitable to other array architectures.
申请人：Frankie Roohparvar
地址：Monte Sereno CA US
国籍：US
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