专利名称：High Voltage Laterally Diffused MOSFET
with Buried Field Shield and Method toFabricate Same
发明人：Tak H. Ning申请号：US15792894申请日：20171025
公开号：US20180061953A1公开日：20180301
专利附图：
摘要：A structure includes a laterally diffused (LD) MOSFET with an n-type drift regiondisposed on a surface of a substrate and a p-type body region contained in the drift
region. The structure further includes an n-type source region contained in the p-typebody region; an n-type drain region contained in the n-type drift region; a gate electrodedisposed on a gate dielectric overlying a portion of the p-type body region and the n-type drift region and an electrically conductive field shield member disposed within then-type drift region at least partially beneath the p-type body region and generallyparallel to the gate electrode. The electrically conductive buried field shield member iscontained within and surrounded by a layer of buried field shield oxide and is common toboth a first LD MOSFET and a second LD MOSFET that are connected in parallel. Methodsto fabricate the structure are also disclosed.
申请人：International Business Machines Corporation
地址：Armonk NY US
国籍：US
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