专利名称：SEMICONDUCTOR DEVICE HAVING BURIED
GATE, METHOD OF FABRICATING THESAME, AND MODULE AND SYSTEM HAVINGTHE SAME
发明人：Tae Kyung OH,Min Soo YOO申请号：US13719002申请日：20121218
公开号：US20140063934A1公开日：20140306
专利附图：
摘要：A semiconductor device includes junction regions formed in upper portions of
both sidewalls of a trench formed in a semiconductor substrate, a first gate electrodeburied in the trench and having a stepped upper surface, and a second gate electrodeformed on the first gate electrode to overlap a junction region.
申请人：SK HYNIX INC.
地址：Icheon KR
国籍：KR
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