CMOS technology capacitor

专利名称：CMOS technology capacitor发明人：FENSCH, THIERRY申请号：EP93420321.7申请日：19930727公开号：EP0581702A1公开日：19940202

专利附图：

摘要：The present invention relates to an integrated circuit capacitor of CMOS type,this circuit comprising a substrate with a first type of conductivity (3) in which wells withthe second type of conductivity are formed, part of which is surmounted by an insulatedgate. This capacitor is formed in two identical wells (31, 41) surmounted by identical gates

(32, 42). Each well comprises a region of the second type of conductivity (33, 43) with ahigh level of doping extending substantially between the projection of the gate and thevicinity of the periphery of the well. Each gate of a well is connected to the region of theother well with the second type of conductivity and constitutes an electrode of thecapacitor.

申请人：SGS-THOMSON MICROELECTRONICS S.A.

地址：7, AVENUE GALLIENI; F-94250 GENTILLY,7, Avenue Galliéni F-94250 Gentilly FR

国籍：FR

代理机构：de Beaumont, Michel

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