Method for Forming Capacitor

专利名称：Method for Forming Capacitor发明人：Kang Hyun Lee申请号：US11613215申请日：20061220

公开号：US20070148898A1公开日：20070628

专利附图：

摘要：A method for forming a capacitor is provided. In an embodiment of the method,a lower electrode of the capacitor is formed on a semiconductor substrate. An insulatinglayer and a metal layer are sequentially deposited on the lower electrode of thecapacitor, and a photoresist pattern is formed on the metal layer. The metal layer is

etched using the photoresist pattern as a mask to form an upper electrode of thecapacitor and to form a polymer layer on a sidewall of the upper electrode of thecapacitor. Subsequently, the insulating layer is etched using the photoresist pattern as amask to form an insulating layer of the capacitor. The polymer layer formed on thesidewalls of the upper electrode of the capacitor is cleaned and removed.

申请人：Kang Hyun Lee

地址：Yongin-si KR

国籍：KR

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