Poly-crystalline thin film transistor and fabricat

专利名称：Poly-crystalline thin film transistor and

fabrication method thereof

发明人：Han-Wook Hwang申请号：US10733237申请日：20031212

公开号：US20040126955A1公开日：20040701

专利附图：

摘要：A thin film transistor and its fabrication method. The transistor includes a bufferlayer on a substrate, and a poly-crystalline semiconductor layer on the buffer layer. Thepoly-crystalline semiconductor layer includes a channel layer, offset regions along sides

of the channel layer, sequential doping regions along sides of the offset regions, andsource and drain regions. The doping concentration is sequentially changed in thesequential doping region. A sloped gate insulation layer is on the poly-crystallinesemiconductor layer. A gate electrode having a main gate electrode and auxiliary gateelectrodes is on the sloped insulation layer. An interlayer is over the gate electrode andsource and drain electrodes are formed in contact with the source and drain regions andon the interlayer. The poly-crystalline semiconductor layer is formed by ion doping apoly-crystalline semiconductor layer through the gate insulation layer while using thegate electrode as a mask.

申请人：HWANG HAN-WOOK

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