专利名称：Lateral drain-extended MOSFET having
channel along sidewall of drain extensiondielectric
发明人：Marie Denison,Taylor Rice Efland申请号：US13027734申请日：20110215公开号：US08173510B2公开日：20120508
专利附图：
摘要：An integrated circuit () includes one of more transistors () on or in a substrate ()having semiconductor surface layer, the surface layer having a top surface. At least one of
the transistors are drain extended metal-oxide-semiconductor (DEMOS) transistor (). TheDEMOS transistor includes a drift region () in the surface layer having a first dopant type,a field dielectric () in or on a portion of the surface layer, and a body region of a seconddopant type () within the drift region (). The body region () has a body wall extendingfrom the top surface of the surface layer downwards along at least a portion of adielectric wall of an adjacent field dielectric region. A gate dielectric () is on at least aportion of the body wall. An electrically conductive gate electrode () is on the gatedielectric () on the body wall. A source region () of the first doping type is in the bodyregion (), a drain region () of the first doping type is in the drift region (), and
interconnects () are operable to electrically connect the one or more transistors to eachother on the integrated circuit ().
申请人：Marie Denison,Taylor Rice Efland
地址：Plano TX US,Richardson TX US
国籍：US,US
代理人：Warren L. Franz,Wade J. Brady, III,Frederick J. Telecky, Jr.
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