专利名称：FIN FIELD EFFECT TRANSISTOR发明人：Hung-Ta LIN,Chu-Yun FU,Shin-Yeh
HUANG,Shu-Tine YANG,Hung-Ming CHEN
申请号：US13859505申请日：20130409
公开号：US20130228865A1公开日：20130905
专利附图：
摘要：A FinFET is described, the FinFET includes a substrate including a top surface anda first insulation region and a second insulation region over the substrate top surfacecomprising tapered top surfaces. The FinFET further includes a fin of the substrate
extending above the substrate top surface between the first and second insulationregions, wherein the fin includes a recessed portion having a top surface lower than thetapered top surfaces of the first and second insulation regions, wherein the fin includes anon-recessed portion having a top surface higher than the tapered top surfaces. TheFinFET further includes a gate stack over the non-recessed portion of the fin.
申请人：TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
地址：US
国籍：US
更多信息请下载全文后查看
因篇幅问题不能全部显示，请点此查看更多更全内容