专利名称：VACUUM INTEGRATED ELECTRONIC DEVICE
AND MANUFACTURING PROCESS THEREOF
发明人：Davide Giuseppe Patti,Myung Sung Kim申请号：US15150895申请日：20160510
公开号：US20170148604A1公开日：20170525
专利附图：
摘要：A vacuum integrated electronic device has an anode region of conductivematerial; an insulating region on top of the anode region; a cavity extending through theinsulating region and having a sidewall; and a cathode region. The cathode region has a
tip portion extending peripherally within the cavity, adjacent to the sidewall of the cavity.The cathode region is formed by tilted deposition, carried out at an angle of 30-60° withrespect to a perpendicular to the surface of device.
申请人：STMICROELECTRONICS S.R.L.,STMICROELECTRONICS PTE LTD
地址：Agrate Brianza IT,Singapore SG
国籍：IT,SG
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