revision-K1.0e, ' 98.09.07MITSUBISHILSIs
M5M5V408BFP/TP/RT/KV/KR
4194304-BIT(524288-WORDBY8-BIT)CMOSSTATICRAM
DESCRIPTION
The M5M5V408B is a family of low voltage 4-Mbit static RAMsorganized as 524,288-words by 8-bit, fabricated by Mitsubishi's high-performance 0.25µm CMOS technology.
The M5M5V408B is suitable for memory applications where asimple interfacing , battery operating and battery backup are theimportant design objectives.
M5M5V408B is packaged in 32-pin plastic SOP, 32-pin plasticTSOP and 32-pin 8mm x 13.4mm STSOP packages. Two types ofTSOPs and two types of STSOPs are available, M5M5V408BTP(normal-lead-bend TSOP), M5M5V408BRT (reverse-lead-bendTSOP), M5M5V408BKV (normal-lead-bend STSOP) andM5M5V408BKR (reverse-lead-bend STSOP). These two typesTSOPs and two types STSOPs are suitable for a surface mountingon double-sided printed circuit boards.
From the point of operating temperature, the family is divided intothree versions; \"Standard\W-version\I-version\". Those aresummarized in the part name table below.
FEATURES
• Single +2.7~+3.6V power supply• Small stand-by current: 0.3µA(3V,typ.)• No clocks, No refresh
• Data retention supply voltage=2.0V to 3.6V• All inputs and outputs are TTL compatible.• Easy memory expansion by S• Common Data I/O
• Three-state outputs: OR-tie capability
• OE prevents data contention in the I/O bus• Process technology: 0.25µm CMOS• Package:
M5M5V408BFP: 32 pin 525 mil SOP
M5M5V408BTP/RT: 32 PIN 400mil TSOP(ll)
M5M5V408BKV/KR: 32 pin 8mm x13.4mm STSOP
PARTNAMETABLE
Version,Operatingtemperature
Partname
(## stands for \"FP\
\"RT\M5M5V408B## -85LM5M5V408B## -10LM5M5V408B## -85HM5M5V408B## -10HM5M5V408B## -85LW
PowerSupply
2.7 ~ 3.6V2.7 ~ 3.6V2.7 ~ 3.6V2.7 ~ 3.6V2.7 ~ 3.6V2.7 ~ 3.6V
AccesstimeStand-by current Icc(PD), Vcc=3.0Vtypical*Ratings(max.)25°C40°C25°C40°C70°C85°C---------1µA---1µA---1µA
---3µA---3µA---3µA
20µA10µA
------
max.
85ns100ns
85ns100ns85ns100ns85ns100ns85ns100ns85ns100ns
ActivecurrentIcc1 (3.0V, typ.)Standard0 ~ +70°C
0.3µA1µA------
W-version-20~ +85°C
M5M5V408B## -10LWM5M5V408B## -85HWM5M5V408B## -10HWM5M5V408B## -85LI
20µA40µA10µA20µA20µA40µA10µA20µA
30mA(10MHz)5mA(1MHz)
0.3µA1µA------
I-version-40 ~ +85°C
M5M5V408B## -10LIM5M5V408B## -85HIM5M5V408B## -10HI
0.3µA1µA
* \"typical\" parameter is sampled, not 100% tested.
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revision-K1.0e, ' 98.09.07MITSUBISHILSIs
M5M5V408BFP/TP/RT/KV/KR
4194304-BIT(524288-WORDBY8-BIT)CMOSSTATICRAM
PINCONFIGURATION(TOPVIEW)
A18A16A14A12A7A6A5A4A3A2A1A0DQ1DQ2DQ3GND
1234567891011121314151632313029282726252423222120191817VCCA15A17WA13A8A9A11OEA10SDQ8DQ7DQ6DQ5DQ4VCCA15A17WA13A8A9A11OEA10SDQ8DQ7DQ6DQ5DQ4
3231302928272625242322212019181712345678910111213141516A18A16A14A12A7A6A5A4A3A2A1A0DQ1DQ2DQ3GND
Outline
32P2M-A (FP)32P3Y-H (TP)
Outline32P3Y-J (RT)
A11A9A8A13WA18A15VccA17A16A14A12A7A6A5A4
1234567891011121314151632313029282726252423222120191817OEA10SDQ8DQ7DQ6DQ5DQ4GNDDQ3DQ2DQ1A0A1A2A3
A4A5A6A7A12A14A16A17VccA15A18WA13A8A9A11
1615141312111098765432117181920212223242526272829303132A3A2A1A0DQ1DQ2DQ3GNDDQ4DQ5DQ6DQ7DQ8SA10OEOutline 32P3K-B
Outline 32P3K-C
MITSUBISHIELECTRIC2revision-K1.0e, ' 98.09.07MITSUBISHILSIs
M5M5V408BFP/TP/RT/KV/KR
4194304-BIT(524288-WORDBY8-BIT)CMOSSTATICRAM
FUNCTION
The M5M5408BFP,TP,RT,KV,KR is organized as 524,288-words by 8-bit. These devices operate on a single +2.7~3.6Vpower supply, and are directly TTL compatible to both inputand output. Its fully static circuit needs no clocks and norefresh, and makes it useful.
A write operation is executed during the S low and W lowoverlap time. The address(A0~A18) must be set up beforethe write cycle
A read operation is executed by setting W at a high leveland OE at a low level while S are in an active state(S=L).When setting S at a high level, the chips are in a non-selectable mode in which both reading and writing aredisabled. In this mode, the output stage is in a high-impedancestate, allowing OR-tie with other chips. Setting the OE at a highlevel,the output stage is in a high-impedance state, and thedata bus contention problem in the write cycle is eliminated.The power supply current is reduced as low as 0.3µA(25°C,typical), and the memory data can be held at +2V powersupply, enabling battery back-up operation during power failureor power-down operation in the non-selected mode.
FUNCTIONTABLE
SHLLLWXLHHOEXXLHModeNon selectionWriteReadReadDQHigh-impedanceData input (D)Data output (Q)High-impedanceIccStandbyActiveActiveActivePinA0 ~ A18
SWOEVccGND
FunctionAddress inputChip select inputWrite control inputOutput inable inputPower supplyGround supply
DQ1 ~ DQ8Data input / output
BLOCKDIAGRAM
M5M5V408BFP/TP/RTM5M5V408BKV/KR16151413121110967M5M5V408BKV/KRA4A5A6A7A12A14A16A17A18A15A10A11A9A8A13876543230131M5M5V408BFP/TP/RT13141517181920212122MEMORY ARRAY524288 WORDSx 8 BITS232526272829DQ1DQ2DQ3DQ4DQ5DQ6DQ7DQ82325262728311234530292224CLOCKGENERATORWSOEVCC(3V)A0A1A2A3121110920191817328322416GND(0V)MITSUBISHIELECTRIC3元器件交易网www.cecb2b.com
revision-K1.0e, ' 98.09.07MITSUBISHILSIs
M5M5V408BFP/TP/RT/KV/KR
4194304-BIT(524288-WORDBY8-BIT)CMOSSTATICRAM
ABSOLUTEMAXIMUMRATINGS
Symbol
ParameterSupply voltageInput voltageOutput voltagePower dissipationOperatingtemperatureStorage temperatureConditions
With respect to GNDWith respect to GNDWith respect to GNDTa=25°CStandardW-versionI-version
(-L, -H)(-LW, -HW)(-LI, -HI)
Ratings
Units
VccVIVOPdTaTstg
-0.5* ~ +4.6-0.5* ~ Vcc + 0.5
0 ~ Vcc 7000~ +70-20~ +85-40~ +85-65 ~150
VmW°C°C
* -3.0V in case of AC (Pulse width ≤ 30ns)
DCELECTRICALCHARACTERISTICS
SymbolParameterHigh-level input voltageLow-level input voltage
High-level output voltage 1IOH= -0.5mAHigh-level output voltage 2IOH= -0.05mALow-level output voltageInput leakage currentOutput leakage currentActive supply current
( AC,MOS level )Active supply current
( AC,TTL level )
Conditions
( Vcc=2.7 ~ 3.6V, unless otherwise noted)
Limits
Min
Typ
MaxVcc+0.3V
Units
VIHVILVOH1VOH2VOLIIIOIcc1Icc2
2.2-0.3 *2.4Vcc-0.5V
0.6
V
0.4±1±1
IOL=2mAVI =0 ~ Vcc
S=VIHor OE=VIH, VI/O=0 ~ Vcc
S ≤0.2VOutput-open
Other inputs ≤0.2V or ≥Vcc-0.2VOutput-openS=VIL
Other inputs=VIHor VIL
f= 10MHzf= 1MHzf= 10MHzf= 1MHz
µA
-------------
-LW, -LI+70~ +85°C
+70°C-L, -LW, -LI
Stand by supply current
( AC,MOS level )
-HW, -HI+70~ +85°C
S ≥Vcc-0.2V+40 ~ +70°C
-H, -HW, -HI
Other inputs=0~Vcc+25~ +40°C
-H0~ +25°C
-HW-HI
Stand by supply current
( AC,TTL level )
-20~ +25°C-40~ +25°C
Icc3
305305----10.30.30.3-
407407482424123.61.21.21.20.5
mA
µA
Icc4
S=V,Other inputs= 0 ~ Vcc
mA
Note 1: Direction for current flowing into IC is indicated as positive (no mark)Note 2: Typical value is for Vcc=3.0V and Ta=25°C
* -3.0V in case of AC (Pulse width ≤ 30ns)
CAPACITANCE
SymbolParameterInput capacitanceOutput capacitance
Conditions
VI=GND, VI=25mVrms, f=1MHzVO=GND,VO=25mVrms, f=1MHz
(Vcc=2.7 ~ 3.6V, unless otherwise noted)
LimitsTypMax
Units
Min
CI
CO
810
pF
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revision-K1.0e, ' 98.09.07MITSUBISHILSIs
M5M5V408BFP/TP/RT/KV/KR
4194304-BIT(524288-WORDBY8-BIT)CMOSSTATICRAM
ACELECTRICALCHARACTERISTICS(1)TESTCONDITIONS
Supply voltageInput pulse
Input rise time and fall timeReference level
(Vcc=2.7 ~ 3.6V, unless otherwise noted)
2.7V~3.6V
VIH=2.4V,VIL=0.4V5ns
VOH=VOL=1.5V
Transition is measured ±500mV from steady state voltage.(for ten,tdis)
1TTLDQ
CLIncluding scope andjig capacitance
Output loads
Fig.1,CL=30pF
CL=5pF (for ten,tdis)
Fig.1 Output load
(2)READCYCLE
Limits
Symbol
Parameter
Read cycle time
Address access timeChip select access timeOutput enable access timeOutput disable time after S highOutput disable time after OE highOutput enable time after S lowOutput enable time after OE lowData valid time after address
M5M5V408BFP,TP,RT,KV,KR-85M5M5V408BFP,TP,RT,KV,KR-10
Units
Min
MaxMinMax
tCR ta(A) ta(S) ta(OE) tdis(S) tdis(OE) ten(S) ten(OE) tV(A)
85
8585453030
10510
100
100100503535
10510nsnsnsnsnsnsnsnsns
(3)WRITECYCLE
Limits
Symbol
Parameter
Write cycle timeWrite pulse widthAddress set up time
Address set up time with respect to W highChip select set up time Data set up timeData hold time
Write recovery time
Output disable time after W lowOutput disable time after OE highOutput enable time after W highOutput enable time after OE lowM5M5V408BFP,TP,RT,KV,KR-85M5M5V408BFP,TP,RT,KV,KR-10
Units
MinMaxMinMax
tCWtw(W) tsu(A) tsu(A-WH) tsu(S) tsu(D) th(D) trec(W) tdis(W) tdis(OE) ten(W) ten(OE)
8560070703500
3030
55
10075085854000
3535
55nsnsnsnsnsnsnsnsnsnsnsns
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revision-K1.0e, ' 98.09.07MITSUBISHILSIs
M5M5V408BFP/TP/RT/KV/KR
4194304-BIT(524288-WORDBY8-BIT)CMOSSTATICRAM
(4)TIMINGDIAGRAMS
ReadcycleA0~18
ta(A)ta(S)S
(Note3)tCRtv (A)tdis(S) ta (OE)(Note3)OE
(Note3)W = \"H\" levelten(OE)ten(S)tdis(OE)(Note3)DQ1~8
VALID DATAWritecycle(Wcontrolmode)
tCWA0~18
tsu(S)S
(Note3)tsu(A-WH)(Note3)OE
tsu (A)W
tw(W)trec(W)tdis(W)tdis(OE)DQ1~8
DATA INSTABLEten(OE)ten(W)tsu (D)th (D)MITSUBISHIELECTRIC6元器件交易网www.cecb2b.com
revision-K1.0e, ' 98.09.07MITSUBISHILSIs
M5M5V408BFP/TP/RT/KV/KR
4194304-BIT(524288-WORDBY8-BIT)CMOSSTATICRAM
Writecycle(Scontrolmode)
tCWA0~18
tsu (A)S
tsu(S)trec(W)(Note5)W
(Note3)(Note4)(Note3)tsu (D)DATA INSTABLEth (D)DQ1~8
Note 3: Hatching indicates the state is \"don't care\".
Note 4: A Write occurs during the overlap of a low S and a low W.Note 5: If W goes low simultaneously with or prior to S,the output remains in the high impedance state.Note 6: Don't apply inverted phase signal externally when DQ pin is in output mode.
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revision-K1.0e, ' 98.09.07MITSUBISHILSIs
M5M5V408BFP/TP/RT/KV/KR
4194304-BIT(524288-WORDBY8-BIT)CMOSSTATICRAM
POWERDOWNCHARACTERISTICS(1)ELECTRICALCHARACTERISTICS
Symbol
Parameter
Test conditions
LimitsMin Typ
Max
UnitsVV
Vcc(PD)Power down supply voltageChip select input SVI (S)
-LW, -LI+70 ~ +85°C
-L, -LW, -LI+70°C-HW, -HI+70 ~ +85°C
Icc (PD)
Power down
supply current
Vcc=3.0V, S≥Vcc-0.2V, Other inputs=0 ~ Vcc
-H, -HW, -HI-H-HW
+40 ~ +70°C+25 ~ +40°C0 ~ +25°C-20~ +25°C
2.02.0--------
----10.30.30.3-HI-40~ +25°C
402020103111µAµAµAµAµAµAµAµA
Typical value is for Ta=25°C
(2)TIMINGREQUIREMINTS
Symbol
Parameter
Power down set up timePower down recovery time
Test conditions
Limits
Min 05
Typ
Max
Unitsnsms
tsu (PD)trec (PD)
(3)TIMINGDIAGRAM
Scontrolmode
Vcc
tsu (PD)2.2VS
S≥Vcc - 0.2V2.7V2.7Vtrec (PD)2.2VMITSUBISHIELECTRIC8元器件交易网www.cecb2b.com
revision-K1.0e, ' 98.09.07MITSUBISHILSIs
M5M5V408BFP/TP/RT/KV/KR
4194304-BIT(524288-WORDBY8-BIT)CMOSSTATICRAM
RevisionHistoryRevisionNo.K0.1eK0.2eK1.0e
HistoryThefirstedition
AddedM5M5V408BFP/TP/RTThefirstproductversion
Date'98.3.05'98.7.30'98.9.7
PreliminaryPreliminary
MITSUBISHIELECTRIC932P2M-APlastic 32pin 525mil SOPWeight(g)1.29Lead MaterialAlloy 42eb217EIAJ Package CodeSOP32-P-525-1.27JEDEC Code–元器件交易网www.cecb2b.com
32HEEe1Recommended Mount PadSymbol161AFDA2A1L1byeLcDetail FAA1A2bcDEeHELL1yb2e1I2Dimension in MillimetersMinNomMax––3.0500.10.2–2.75–0.350.40.50.130.150.220.5520.7520.9511.311.411.5–1.27–13.814.114.40.60.81.0–1.35–––0.150°–8°–0.76––13.34––1.27–I2Mar.’9832P3Y-HPlastic 32pin 400mil TSOP ( )Weight(g)0.53eb2Lead MaterialAlloy 42EIAJ Package CodeTSOP 32-P-400-1.27I IJEDEC Code–元器件交易网www.cecb2b.com
EHE116AcDL1LeybA2A1Detail FME3217Recommended Mount PadSymbolAA1A2bcDEeHELL1yMEI2b2Dimension in MillimetersMinNomMax––1.20.1250.20.05––1.00.350.40.50.1050.1250.17520.8520.9521.05 10.1610.2610.06–1.27–11.7611.5611.960.50.40.60.8––––0.1–0°10°10.36––––0.9––0.76I2Mar.’98F32P3Y-JPlastic 32pin 400mil TSOP ( )Weight(g)0.53eb2Lead MaterialAlloy 42EIAJ Package CodeTSOP 32-P-400-1.27I IJEDEC Code–I2元器件交易网www.cecb2b.com
FMERecommended Mount PadSymbolAcL1LDA2Detail FA1AA1A2bcDEeHELL1y17161HEE32eybMEI2b2Dimension in MillimetersMinNomMax––1.20.1250.20.05––1.00.350.40.50.1050.1250.17520.8520.9521.05 10.1610.2610.06–1.27–11.7611.5611.960.50.40.60.8––––0.1–0°10°10.36––––0.9––0.76Mar.’9832P3K-BPlastic 32pin 8!13.4mm TSOP( )Weight(g)MDeLead MaterialAlloy 42元器件交易网www.cecb2b.com
EIAJ Package Code–JEDEC Code–HDl2e32Db2Recommended Mount PadySymbol171EFAA2bL116cAA1A2bcDEeHDLL1yLDetail Fb2I2MDA1Dimension in MillimetersMinNomMax––1.20.050.1250.2–1.0–0.150.20.30.130.150.211.711.811.97.98.08.1–0.5–13.213.413.60.40.50.6–0.8–––0.10°–10°–0.225–0.9––12.0––Mar.’9832P3K-CPlastic 32pin 8!13.4mm TSOP( )Weight(g)MDeLead MaterialAlloy 42元器件交易网www.cecb2b.com
EIAJ Package Code–JEDEC Code–D1b2HD32el2Recommended Mount PadySymbolE16FAbL1A217cAA1A2bcDEeHDLL1yLDetail Fb2I2MDA1Dimension in MillimetersMinNomMax––1.20.050.1250.2–1.0–0.150.20.30.130.150.211.711.811.97.98.08.1–0.5–13.213.413.60.40.50.6–0.8–––0.10°–10°–0.225–0.9––12.0––Mar.’98
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