Process for fabricating semiconductor device and m

专利名称：Process for fabricating semiconductor

device and method for generating maskpattern data

发明人：Toshihiko Tanaka申请号：US10551553申请日：20041222

公开号：US20060183310A1公开日：20060817

专利附图：

摘要：A method of fabricating a semiconductor device including a first wiring patternextending in a vertical direction and a second wiring pattern identical in geometry to the

first wiring pattern and extending in a (horizontal) direction orthogonal to the verticaldirection, including the steps of: employing linearly polarized illumination to performexposure along a mask pattern including mask patterns used to form the first andsecond wiring patterns, respectively; and subsequently forming the first and secondwiring patterns having a geometry along the mask patterns. The mask patterns to formthe first and second wiring patterns are formed to be different in geometry.

申请人：Toshihiko Tanaka

地址：Tokyo JP

国籍：JP

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