专利名称：Semiconductor device, electrode member
and electrode member fabrication method
发明人：Katsuya Okumura,Yoshikazu
Takahashi,Kazunori Takenouchi
申请号：US11351338申请日：20060210
公开号：US20060192253A1公开日：20060831
专利附图：
摘要：A semiconductor device that improves the heat cycle resistance and power cycleresistance of a power module. An electrode member in which copper posts are formed in
a plurality of perforations cut in a support made of a ceramic material is soldered onto aside of an IGBT where an emitter electrode is formed. By soldering the copper postsonto the electrode, heat generated in the IGBT is transferred to the electrode memberand is radiated. In addition, even if a material of which the IGBT is made and copper differin thermal expansivity, stress on a soldered interface is reduced and distortion is reduced.This suppresses the appearance of a crack. As a result, the heat cycle resistance andpower cycle resistance of a power module can be improved.
申请人：Katsuya Okumura,Yoshikazu Takahashi,Kazunori Takenouchi
地址：Tokyo JP,Tokyo JP,Kirishima-shi JP
国籍：JP,JP,JP
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