专利名称：SEMICONDUCTOR DEVICE ASSEMBLIES
INCLUDING INTERMETALLIC COMPOUNDINTERCONNECT STRUCTURES
发明人：Jaspreet S. Gandhi申请号：US15350926申请日：20161114
公开号：US20170062365A1公开日：20170302
专利附图：
摘要：A method of forming a semiconductor device assembly comprises forming on afirst substrate, at least one bond pad comprising a first nickel material over the first
substrate, a first copper material on the first nickel material, and a solder-wettingmaterial on the first copper material. On a second substrate is formed at least oneconductive pillar comprising a second nickel material, a second copper material directlycontacting the second nickel material, and a solder material directly contacting thesecond copper material. The solder-wetting material is contacted with the soldermaterial. The first copper material, the solder-wetting material, the second coppermaterial, and the solder material are converted into a substantially homogeneousintermetallic compound interconnect structure. Additional methods, semiconductordevice assemblies, and interconnect structures are also described.
申请人：Micron Technology, Inc.
地址：Boise ID US
国籍：US
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