专利名称：STRUCTURE AND METHOD FOR
MANUFACTURING THE SAME
发明人：Katsura Hayashi申请号：US13498764申请日：20100928
公开号：US20120189826A1公开日：20120726
专利附图：
摘要：A structure for which the electrical reliability is improved is provided. Astructure in accordance with one embodiment includes an inorganic insulating layerincluding amorphous silicon oxide and having an elastic modulus which is 45 GPa or less. A
method for manufacturing a structure in accordance with one embodiment includesapplying an inorganic insulating sol including inorganic insulating particles composed ofamorphous silicon oxide, and forming an inorganic insulating layer including amorphoussilicon oxide and having an elastic modulus which is 45 GPa or less by heating theinorganic insulating particles at a temperature lower than a crystallization onsettemperature of silicon oxide to each other.
申请人：Katsura Hayashi
地址：Yasu-shi JP
国籍：JP
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