6N137 / VO2601 / 11 / VO2630 / 31 / VO4661
Vishay Semiconductors
High Speed Optocoupler, 10 Mbd
Features
•Choice of CMR performance of 10 kV/µs, 5 kV/µs, and 100 V/µs
•High speed: 10 Mbd typical
e3•+5V CMOS compatibility
•Guaranteed AC and DC performance over tem-perature: - 40 to + 100°C Temp. Range •Pure tin leads
•Meets IEC60068-2-42 (SO2) and IEC60068-2-43 (H2S) requirements •Low input current capability: 5 mA
•Lead (Pb)-free component
•Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
SinglechannelDualchannelNCACNC12348765VCCVEVOGND18921_5A11C1C2A22348765VCCVO1VO2GND6N137,VO2601, VO2611VO2630, VO2631, VO4661Agency Approvals
•UL1577, File No. E52744 System Code H or J, Double Protection
•CUL - File No. E52744, equivalent to CSA bulletin 5A
•DIN EN 60747-5-2 (VDE0884)
•Reinforced insulation rating per IEC60950 2.10.5.1
•VDE available with Option 1
open collector Schottky clamped transistor output.The VO2630, VO2631 and VO4661 are dual channel10MBd optocouplers. For the single channel type, anenable function on pin 7 allows the detector to bestrobed. The internal shield provides a guaranteedcommon mode transient immunity of 5 kV/µs for theVO2601 and VO2631 and 10 kV/µs for the VO2611and VO4661. The use of a 0.1 µF bypass capacitorconnected between pin 5 and 8 is recommended.
Order Information
Part6N1376N137-X0066N137-X007VO2601VO2601-X006VO2601-X007VO2611VO2611-X006VO2611-X007VO2630VO2630-X006VO2630-X007VO2631VO2631-X006VO2631-X007VO4661VO4661-X006VO4661-X007
Remarks
100 V/µs, Single channel, DIP-8100 V/µs, Single channel, DIP-8 400 mil100 V/µs, Single channel, SMD-85 kV/µs, Single channel, DIP-85 kV/µs, Single channel, DIP-8 400 mil5 kV/µs, Single channel, SMD-810 kV/µs, Single channel, DIP-810 kV/µs, Single channel, DIP-8 400 mil10 kV/µs, Single channel, SMD-8100 V/µs, Dual channel, DIP-8100 V/µs, Dual channel, DIP-8 400 mil100 V/µs, Dual channel, SMD-85 kV/µs, Dual channel, DIP-85 kV/µs, Dual channel, DIP-8 400 mil5 kV/µs, Dual channel, SMD-810 kV/µs, Dual channel, DIP-810 kV/µs, Dual channel, DIP-8 400 mil10 kV/µs, Dual channel, SMD-8
Applications
Microprocessor System InterfacePLC, ATE input/output isolationComputer peripheral interface
Digital Fieldbus Isolation: CC-Link, DeviceNet, Profibus, SDS
High speed A/D and D/A conversionAC Plasma Display Panel Level ShiftingMultiplexed Data TransmissionDigital control power supplyGround loop elimination
Description
The 6N137, VO2601 and VO2611 are single channel10 Mbd optocouplers utilizing a high efficient inputLED coupled with an integrated optical photodiode ICdetector. The detector has an open drain NMOS-tran-sistor output, providing less leakage compared to an
Document Number 84732Rev. 1.0, 07-Jun-05
www.vishay.com
1
元器件交易网www.cecb2b.com
6N137 / VO2601 / 11 / VO2630 / 31 / VO4661
Vishay SemiconductorsTruth Table (Positive Logic)
LEDONOFFONOFFONOFF
ENABLE
HHLLNCNC
OUTPUT
LHHHLH
Absolute Maximum Ratings
Tamb = 25°C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device isnot implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absoluteMaximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Average forward current1)Average forward current2)Reverse input voltageEnable input voltage1)Enable input current1)Surge current
1) Package: Single DIP-82)
Test conditionSymbolIFIFVRVEIE
Value20155VCC + 0.5 V
5200
UnitmAmAVVmAmA
t = 100 µs
IFSM
Package: Dual DIP-8
Output
Parameter
Supply voltageOutput currentOutput voltage
Output power dissipation1)Output power dissipation2)
1)
Test condition1 minute max.
SymbolVCCIOVOPOPO
Value75078560
UnitVmAVmWmW
Package: Single DIP-8
2) Package: Dual DIP-8
Coupler
Parameter
Storage temperatureOperating temperatureLead solder temperature1)Solder reflow temperature2)Isolation test voltage
1)2)
Test conditionSymbolTstgTamb
Value- 55 to + 150- 40 to + 100
260260
Unit°C°C°C°CVRMS
for 10 sec.for 1 minutet = 1.0 sec.
VISO
5300
Package: DIP-8 through hole Package: DIP-8 SMD
www.vishay.com2
Document Number 84732
Rev. 1.0, 07-Jun-05
元器件交易网www.cecb2b.com
6N137 / VO2601 / 11 / VO2630 / 31 / VO4661
Vishay Semiconductors
Recommended Operating Conditions
Parameter
Operating temperatureSupply voltageInput current low levelInput current high levelLogic high enable voltageLogic low enable voltageOutput pull up resistorFanout
RL = 1 kΩ
Test condition
SymbolTambVCCIFLIFHVEHVELRLN
Min- 404.5052.00.0330
Typ.
Max1005.525015VCC0.84 K5
Unit°CVµAmAVVΩ-
Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineeringevaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Input forward voltageReverse currentInput capacitance
Test condition
IF = 10 mAVR = 5.0 Vf = 1 MHz, VF = 0 V
SymbolVFIRCI
Min1.1
Typ.1.40.0155
Max1.710
UnitVµApF
Output
ParameterHigh level supply current (singlechannel)High level supply current (dual channel)Low level supply current (single channel)Low level supply current (dual channel)High level output current
Low level output voltageInput treshold current
High level enable current
Low level enable current
High level enable voltage
Low level enable voltage
Document Number 84732Rev. 1.0, 07-Jun-05
Test condition
VE = 0.5 V, IF = 0 mA
SymbolICCH
Min
Typ.4.1
Max7.0
UnitmA
VE = VCC, IF = 0 mAIF = 0 mA
ICCHICCH
3.36.9
6.012.0
mAmA
VE = 0.5 V, IF = 10 mA, ICCL
4.07.0mA
VE = VCC, IF = 10 mAIF = 10 mA
ICCLICCL
3.36.5
6.012.0
mAmA
VE = 2.0 V, VO = 5.5 V, IF = 250 µAVE = 2.0 V, IF = 5 mA, IOL (sinking) = 13 mAVE = 2.0 V, VO = 5.5 V, IOL (sinking) = 13 mAVE = 2.0 VVE = 0.5 V
IOH VOLITHIEHIELVEHVEL
2.0
0.0020.22.4- 0.6- 0.8
10.65.0- 1.6- 1.6
µAVmAmAmAV
0.8V
www.vishay.com
3
元器件交易网www.cecb2b.com
6N137 / VO2601 / 11 / VO2630 / 31 / VO4661
Vishay SemiconductorsSwitching Characteristics
Over Recommended Temperature (Ta = - 40 to + 100°C), VCC = 5 V, IF = 7.5 mA unless otherwise specified.All Typicals at Ta = 25°C, VCC = 5 V.
Parameter
Propagation delay time to high output level
Propagation delay time to low output level
Pulse width distortionPropagation delay skewOutput rise time (10 - 90 %)Output fall time (90 - 10 %)Propagation delay time of enable from VEH to VELPropagation delay time of enable from VEL to VEH
Test condition
RL = 350 Ω, CL = 15 pF
SymboltPLHtPLH
RL = 350 Ω, CL = 15 pF
tPHLtPHL
RL = 350 Ω, CL = 15 pFRL = 350 Ω, CL = 15 pFRL = 350 Ω, CL = 15 pFRL = 350 Ω, CL = 15 pFRL = 350 Ω, CL = 15 pF, VEL = 0 V, VEH = 3 VRL = 350 Ω, CL = 15 pF, VEL = 0 V, VEH = 3 V
| tPHL - tPLH |
tPSKtrtftELHtEHL
2.982371211
25
50
Min20
Typ.48
Max75*10075*1003540
Unitnsnsnsnsnsnsnsnsnsns
* 75 ns applies to the 6N137 only, a JEDEC registered specification
VCCSingleChannelPulseGen.Zo=50Ωtf=tr=5nsInputIFMonitoringNodeRM1IF234VCC8VE7VOUT6GND5RL0.1µFBypassOutputVOMonitoringNodeCL=15pFtPHLInputIFOutputVOIF=7.5mAIF=3.75mA0mAVOH1.5VVOLtPLHTheProbeandJigCapacitancesareincludedinCL18964-2 Figure1. Single Channel Test Circuit for tPLH, tPHL, tr and tf
PulseGen.Zo=50Ωtf=tr=5nsVCCIF1234GNDDualChannelVCC87650.1µFBypassRLOutputVOMonitoringNodeInputMonitoringNodeRMCL=15pF18963-2Figure2. Dual Channel Test Circuit for tPLH, tPHL, tr and tf
www.vishay.com4
Document Number 84732
Rev. 1.0, 07-Jun-05
元器件交易网www.cecb2b.com
6N137 / VO2601 / 11 / VO2630 / 31 / VO4661
Vishay Semiconductors
PulseGen.Zo=50Ωtf=tr=5ns17.5mAIF234InputVEMonitoringNodeSingleChannelVCC8VE7VOUT6GND5VCCRL0.1µFBypassOutputVOMonitoringNodeCL=15pFInputVEtEHLOutputVOtELH3V1.5V1.5VTheProbeandJigCapacitancesareincludedinCL18975-2Figure3. Single Channel Test Circuit for tEHL and tELH
Common Mode Transient Immunity
ParameterCommon mode transient immunity (high)
Test condition
|VCM| = 10 V, VCC = 5 V, IF = 0 mA, VO(min) = 2 V, RL = 350 Ω, Tamb = 25|VCM| = 50 V, VCC = 5 V, IF = 0 mA, VO(min) = 2 V, RL = 350 Ω, Tamb = 25°C |VCM| = 1 kV, VCC = 5 V, IF = 0 mA, VO(min) = 2 V, RL = 350 Ω, Tamb = 25°C 3)|VCM| = 10 V, VCC = 5 V, IF = 7.5 mA, VO(max) = 0.8 V, RL = 350 Ω, Tamb = 25°C 1)|VCM| = 50 V, VCC = 5 V, IF = 7.5 mA, VO(max) = 0.8 V, RL = 350 Ω, Tamb = 25°C 2)|VCM| = 1 kV, VCC = 5 V, IF = 7.5 mA, VO(max) = 0.8 V, RL = 350 Ω, Tamb = 25°C 3)
1)2)
2)
Symbol| CMH|
°C 1)
| CMH || CMH || CML|| CML || CML |
500010000100500010000
10000150001000015000
V/µsV/µsV/µsV/µsV/µs
Min100
Typ.
Max
UnitV/µs
For 6N137 and VO2630 For VO2601 and VO2631
3) For VO2611 and VO4661
VCCIF1BAVFF234SingleChannelVCC8VE7VOUT6GND5VO0.5VRL0.1µFBypassOutputVOMonitoringNodeVCM0VVO5VVCM(PEAK)SwitchATA:IF=0mAVO(min.)SwitchATA:IF=7.5mAVO(max.)CMHVCM+-PulseGeneratorZO=50ΩCML18976-2Figure4. Single Channel Test Circuit for Common Mode Transient Immunity
Document Number 84732Rev. 1.0, 07-Jun-05
www.vishay.com
5
元器件交易网www.cecb2b.com
6N137 / VO2601 / 11 / VO2630 / 31 / VO4661
Vishay Semiconductors
IFBA12VFF34GNDDualChannelVCC8765+5VRLOutputVOMonitoringNode0.1µFBypass18977-1VCM+-PulseGeneratorZO=50ΩFigure5. Dual Channel Test Circuit for Common Mode Transient Immunity
Safety and Insulation Ratings
As per IEC60747-5-2, §7.4.3.8.1, this optocoupler is suitable for \"safe electrical insulation\" only within the safety ratings. Compliance withthe safety ratings shall be ensured by means of protective circuits.
Parameter
Climatic Classification (according to IEC 68 part 1)
Comparative Tracking IndexVIOTMVIORMPSOISITSICreepageClearanceCreepageClearance
standard DIP-8standard DIP-8400mil DIP-8400mil DIP-8
77880.2
CTI
1758000630
500300175
Test condition
Symbol
Min
Typ.55/110/21
399
VVmWmA°Cmmmmmmmmmm
Max
Unit
Insulation thickness, reinforced ratedper IEC60950 2.10.5.1
www.vishay.com6
Document Number 84732
Rev. 1.0, 07-Jun-05
元器件交易网www.cecb2b.com
6N137 / VO2601 / 11 / VO2630 / 31 / VO4661
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1.7V F – Forward Voltage ( V )I C C l – Low Level Supply Current ( mA )4.03.53.02.52.01.51.00.50.0
–40
–20
0
20
40
60
80
100
VCC = 5 VIF = 10 mAVCC = 7 VIF = 10 mA1.61.51.41.31.21.11.0–40–20IF = 10 mAIF = 50 mAIF = 20 mAIF = 1 mA02040608010017614Tamb – Ambient Temperature ( C )
17610Tamb – Ambient Temperature ( °C )Figure6. Forward Voltage vs. Ambient TemperatureFigure9. Low Level Supply Current vs. Ambient Temperature
I C C h – High Level Supply Current ( mA )1.601.55V F – Forward Voltage ( V )1.501.451.401.351.301.251.201.151.10
0
17611
3.53.43.33.23.13.02.92.8
–40
VCC = 5 VIF = 0.25 mAVCC = 7 V IF = 0.25 mA5
101520253035404550IF – Forward Current ( mA )
17615
–20020406080100Tamb – Ambient Temperature ( C )
Figure7. Forward Voltage vs. Forward CurrentFigure10. High Level Supply Current vs. Ambient Temperature
7I R – Reverse Current ( nA )6543210–4017613-12.8I – Input Threshold ON Current ( A )th2.72.62.52.42.32.22.1
–40
RL = 4 kRL = 1 kRL = 350 –20020406080100Tamb – Ambient Temperature ( C )17616
–20020406080100Tamb – Ambient Temperature ( C )
Figure8. Reverse Current vs. Ambient TemperatureFigure11. Input Threshold ON Current vs. Ambient Temperature
Document Number 84732Rev. 1.0, 07-Jun-05
www.vishay.com
7
元器件交易网www.cecb2b.com
6N137 / VO2601 / 11 / VO2630 / 31 / VO4661
Vishay Semiconductors
2.6I t h – Input Threshold OFF Current ( A )50I o – High Level Output Current ( nA )h454035302520151050
–40
–20020406080100Tamb – Ambient Temperature ( C )
2.52.42.32.2
RL = 4 k2.12.0–40
RL = 1 k–20
0
20
40
60
80
100
RL = 350 17617Tamb – Ambient Temperature ( C )
17620
Figure12. Input Threshold OFF Current vs. Ambient TemperatureFigure15. High Level Output Current vs. Ambient Temperature
0.30Vo l – Low Level Output Voltage ( V )0.250.200.15
IL = 10 mA0.100.050.00
–40
IL = 6 mAVCC = 5.5 VIF = 5 mAIL = 16 mAIL = 13 mA5.55.0Vo – Output Voltage ( V )4.54.03.53.02.52.01.51.00.5RL = 4 kW0123450.0RL = 350 WRL = 1 kW–20020406080100
1762117618Tamb – Ambient Temperature ( C )
IF – Forward Input Current ( mA )Figure13. Low Level Output Voltage vs. Ambient TemperatureFigure16. Output Voltage vs. Forward Input Current
60I o l – Low Level Output Current ( mA )120t P – Propagation Delay time ( ns )50403020100–40–20IF = 5 mAIF = 10 mAtPLH, 4 kΩ100806040tPHL, 350 Ω200–40–20tPHL, 1 kΩtPHL, 4 kΩ020406080100tPLH, 350 ΩtPLH, 1 kΩ0204060801001762217619Tamb – Ambient Temperature ( _C )Tamb – Ambient Temperature ( °C )Figure14. Low Level Output Current vs. Ambient TemperatureFigure17. Propagation Delay vs. Ambient Temperature
www.vishay.com8
Document Number 84732
Rev. 1.0, 07-Jun-05
元器件交易网www.cecb2b.com
6N137 / VO2601 / 11 / VO2630 / 31 / VO4661
Vishay Semiconductors
120t P – Propagation Delay time ( ns )tPLH, 4 kΩt r , f – Rise and Fall Time ( ns )300tr, RL = 4 kΩ250200150100tr, RL = 1 kΩ50tr, RL = 350 Ωtf, RL = 350 Ωtf, RL = 1 kΩtf, RL = 4 kΩ1008060402005tPLH, 350 ΩtPLH, 1 kΩtPHL, 350 ΩtPHL, 1 kΩtPHL, 4 kΩ17623791113IF – Forward Current ( mA )15176260–40–20020406080100Tamb – Ambient Temperature ( °C )Figure18. Propagation Delay vs. Forward CurrentFigure21. Rise and Fall Time vs. Ambient Temperature
50PWD – Pulse Width Distortion ( ns )403020
RL = 1 kΩ100–40
RL = 350 ΩRL = 4 kΩ300tr, RL = 4 kΩt r , f – Rise and Fall Time ( ns )250200150100tr, RL = 1 kΩ500579111315tr, RL = 350 Ωtf, RL = 350 Ωtf, RL = 1 kΩtf, RL = 4 kΩ–20020406080100
1762717624Tamb – Ambient Temperature ( °C )
IF – Forward Current ( mA )Figure19. Pulse Width Distortion vs. Ambient TemperatureFigure22. Rise and Fall Time vs. Forward Current
60PWD – Pulse Width Distortion ( ns )504030201005
17625
60t e – Enable Propagation Delay ( ns )RL = 4 kΩ50
teLH = 4 kΩ40302010
teHL = 1 kΩ0
–40
–20
0
20
40
teHL = 4 kΩ60
80
100
teLH = 1 kΩteLH = 350 ΩteHL = 350 ΩRL = 1 kΩRL = 350 Ω7
91113
IF – Forward Current ( mA )
15
17628Tamb – Ambient Temperature ( °C )
Figure20. Pulse Width Distortion vs. Forward CurrentFigure23. Enable Propagation Delay vs. Ambient Temperature
Document Number 84732Rev. 1.0, 07-Jun-05
www.vishay.com
9
元器件交易网www.cecb2b.com
6N137 / VO2601 / 11 / VO2630 / 31 / VO4661
Vishay Semiconductors
Package Dimensions in Inches (mm)
pinoneID4.255(6.48).268(6.81)5678ISOMethodA321.379(9.63).390(9.91).030(0.76).045(1.14)4°typ..031(0.79).130(3.30).150(3.81).050(1.27).018(.46).022(.56)i178006.300(7.62)typ..020(.51).035(.89).100(2.54)typ.10°3°–9°.008(.20).012(.30).230(5.84).110(2.79).250(6.35).130(3.30)Option6.407(10.36).391(9.96).307(7.8).291(7.4).028(0.7)MIN.Option7.300(7.62)TYP..180(4.6).160(4.1).315(8.0)MIN..014(0.35).010(0.25).400(10.16).430(10.92).331(8.4)MIN..406(10.3)MAX.18450-1www.vishay.com10
Document Number 84732
Rev. 1.0, 07-Jun-05
元器件交易网www.cecb2b.com
6N137 / VO2601 / 11 / VO2630 / 31 / VO4661
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1.Meet all present and future national and international statutory requirements.
2.Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.
1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 84732Rev. 1.0, 07-Jun-05
www.vishay.com
11
元器件交易网www.cecb2b.com
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, byestoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay'sterms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any expressor implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitnessfor a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.Customers using or selling these products for use in such applications do so at their own risk and agree to fullyindemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000Revision: 08-Apr-05
www.vishay.com
1
因篇幅问题不能全部显示，请点此查看更多更全内容