Charge pump circuits having floating wells

专利名称：Charge pump circuits having floating wells发明人：Ki-Hwan Choi,Seung-Keun Lee,Kang-Deog

Suh

申请号：US09/057784申请日：19980409公开号：US05986947A公开日：19991116

摘要：The well regions of pumping units of charge pump circuits are maintainedelectrically floating. By maintaining the wells electrically floating, reduced impact fromthe body effect may be obtained. More specifically, integrated circuit charge pumpcircuits boost a first voltage from a voltage source to a second voltage at an outputterminal. The charge pump circuits include a plurality of pumping units in an integratedcircuit substrate of first conductivity type, that are serially connected between thevoltage source and the output terminal. Each of the pumping units includes a well regionof second conductivity type in the integrated circuit substrate of first conductivity type.The well region of second conductivity type is electrically floating. Each pumping unit alsoincludes a transistor of the first conductivity type in the floating well region of secondconductivity type, and a capacitor that is electrically connected to the transistor of thefirst conductivity type in the floating well region of second conductivity type.

申请人：SAMSUNG ELECTRONICS CO., LTD.

代理机构：Myers Bigel Sibley & Sajovec

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