专利名称：PRODUCTION METHOD FOR AN EXPOSURE
SYSTEM
发明人：MIZUGUCHI, Masafumi,KOMINE,
Norio,JINBO, Hiroki
申请号：EP04747307.9申请日：20040709公开号：EP1652972B1公开日：20120530
摘要：An exposure apparatus includes an illumination optical system configured toilluminate a mask by using a laser beam having a wavelength shorter than 250 nm as alight source, and a projection optical system configured to project and expose a patternimage of the mask onto an exposed substrate, in which an optical element made of asynthetic quartz member is disposed in the illumination optical system and/or theprojection optical system. The synthetic quartz member satisfies the following conditionsof initial transmittance relative to light having a wavelength of 150 nm being equal to orabove 60% per centimeter, striae therein satisfying either grade 1 or grade 2 as definedin Japan Optical Glass Industry Society Standard (JOGIS), an absorption coefficient ± foran infrared absorption band of a hydroxyl group located at 3585 cm -1 being equal to orbelow 0.035/cm, and the content of aluminum being equal to or below 1 ppm while thecontent of lithium being equal to or below 0.5 ppm.
申请人：NIKON CORPORATION
代理机构：Viering, Jentschura & Partner
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