Controlling etch rate drift and particles during p

专利名称：Controlling etch rate drift and particles

during plasma processing

发明人：Jianping Zhao申请号：US15869649申请日：20180112公开号：US10354837B2公开日：20190716

专利附图：

摘要：The invention is an plasma processing system with a plasma chamber forprocessing semiconductor substrates, comprising: a radio frequency or microwave powergenerator coupled to the plasma chamber; a low pressure vacuum system coupled to the

plasma chamber; and at least one chamber surface that is configured to be exposed to aplasma, the chamber surface comprising: a YOFlayer that comprises Y in a range from 20to 40%, O in a range from greater than zero to less than or equal to 60%, and F in arange of greater than zero to less than or equal to 75%. Alternatively, the YOFlayer cancomprise Y in a range from 25 to 40%, O in a range from 40 to 55%, and F in a range of 5to 35% or Y in a range from 25 to 40%, O in a range from 5 to 40%, and F in a range of 20to 70%.

申请人：Tokyo Electron Limited

地址：Tokyo JP

国籍：JP

代理机构：Wood Herron & Evans LLP

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