Self-aligned fuse structure and method with anti-r

专利名称：Self-aligned fuse structure and method with

anti-reflective coating

发明人：Gary K. Giust,Ruggero Castagnetti,Yauh-Ching Liu,Subramanian Ramesh

申请号：US09/118602申请日：19980717公开号：US06061264A公开日：20000509

摘要：Provided are a self-aligned semiconductor fuse structure, a method of makingsuch a fuse structure, and apparatuses incorporating such a fuse structure. The fusebreak point, that point at which the electrical link of which the fuse is part is severed by alaser beam, is self- aligned by the use of photolithography and an anti-reflective coating.The self- alignment allows the size and location of the break point to be less sensitive tothe laser beam size and alignment. This has several advantages, including allowingphotolithographic control and effective size reduction of the laser spot irradiating thefuse material and surrounding structure. This permits reduced fuse pitch, increasingdensity and the efficiency of use of chip area, and results in reduced thermal exposure,which causes less damage to chip. In addition, laser alignment is less critical and thereforeless time-consuming, which increases throughput in fabrication.

申请人：LSI LOGIC CORPORATION

代理机构：Beyer & Weaver, LLP

更多信息请下载全文后查看