专利名称：METHOD AND STRUCTURE FOR CREATING
CAVITIES WITH EXTREME ASPECT RATIOS
发明人：Thoralf Kautzsch,Heiko Froehlich,Mirko
Vogt,Maik Stegemann
申请号：US14835001申请日：20150825
公开号：US20160060106A1公开日：20160303
专利附图：
摘要：Embodiments relate to structures, systems and methods for more efficientlyand effectively etching sacrificial and other layers in substrates and other structures. In
embodiments, a substrate in which a sacrificial layer is to be removed to, e.g., form acavity comprises an etch dispersion system comprising a trench, channel or otherstructure in which etch gas or another suitable gas, fluid or substance can flow topenetrate the substrate and remove the sacrificial layer. The trench, channel or otherstructure can be implemented along with openings or other apertures formed in thesubstrate, such as proximate one or more edges of the substrate, to even more quicklydisperse etch gas or some other substance within the substrate.
申请人：Infineon Technologies Dresden GmbH
地址：Dresden DE
国籍：DE
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