Capacitor structure for an integrated circuit

专利名称：Capacitor structure for an integrated circuit发明人：Anthony C. C. Ng,Mukul Saran申请号：US08/398264申请日：19950303公开号：US05583359A公开日：19961210

摘要：A capacitor structure for an integrated circuit and a method of fabrication aredescribed. The capacitor structure is defined by layers forming interconnect metallizationand interlayer dielectrics. The latter are relatively thick, and provide high breakdownvoltages. Multilevel metallization schemes allow for a stack of a plurality of electrodesto be provided. The electrodes may take the form of stacks of flat plates interconnectedin parallel so that the capacitance is the sum of capacitances of alternate layers in thestack. Advantageously each electrode comprises a main portion and a surroundingportion having the form of a protecting ring, coplanar with the main portion of theelectrode. The ring prevents thinning of the dielectric near edges of electrode duringfabrication, to improve control of breakdown voltages for high voltage applications.Alternative electrode structures employing a plurality of interconnected fingers, andparticularly a configuration having interdigitated fingers, are provided to increase thecapacitance per unit surface area. Parallel electrode fingers are stacked in verticalalignment, or offset, and interconnected to provide vertical, horizontal or inclined stackshaving different patterns of polarities, thereby forming capacitors of various

configurations. The capacitor structures have particular application for high voltage ( >100 V), low leakage and high frequency (MHz/GHz) applications.

申请人：NORTHERN TELECOM LIMITED

代理人：Angela C. de Wilton

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