专利名称：Structure and Method for Forming Trench
Gate Transistors with Low Gate Resistance
发明人：James Pan申请号：US12333707申请日：20081212
公开号：US20100013009A1公开日：20100121
专利附图：
摘要：A field effect transistor includes body regions of a first conductivity type over asemiconductor region of a second conductivity type such that the body regions form p-njunctions with the semiconductor region. Trenches extend through the body region and
terminate within the semiconductor region. Source regions of the second conductivitytype extend over the body regions adjacent the trenches such that the source regionsform p-n junctions with the body regions. A gate dielectric layer lines sidewalls of eachtrench. A metal liner lines the gate dielectric layer in each trench. A gate electrodecomprising metallic material is disposed in each trench.
申请人：James Pan
地址：West Jordan UT US
国籍：US
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